By W. Lauterborn, T. Kurz
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Extra resources for Coherent Optics - Fundamentals and Applns
R h s »1 . (6) In n-InP at room temperature (l/h) pr s Z 20. The inequality (6) means that the large-scale impurity fluctuation potential scatters electrons e z ~ «1. It allows the reduction of the propr blem of carrier motion in tfie random field of impurities to the problem through small angles of the quasi-free motion of carriers in the large-scale, quasiclassical impurity potential. It is known (see Sections 78-80 of Ref. 8) that at low concentrations of electrons the main mechanism for light scattering is connected with fluctuations of the electron charge density e6n, where on is the fluctuation of the electron number density.
2. Observation of Phonon-Induced Drag of Excitons It was established that phonon induced relative changes of the FE luminescence intensity are of several tens of percent and drastically depend on the boundary conditions on the surface with EC, namely on the nature of the media in contact with this surface (superfluid LH, He gas, vacuum) and on the perfection of the Si surface. F~gure 2 shows the phonon-induced luminescence pulses ~IF(t) by FE and ~I (t) for BE for the case of standard ("ordinary") Si surfaces with the thin (70 A) oxide film usually formed by oxidation of surfaces in the open air atmosphere.
EXPERIMENT Quasielastic light scattering spectra were excited by a YAG:Nd 3+ cw laser using the A = 1064 nm line and registered by a double grating spectrometer equipped with a cooled photomultiplier in the photon-counting regime. The spectrometer scan was linear in wavelength, and the spectral resolution was 4 cm- l Samples of n-type InP with electron concentration from 1 x 10 8 cm- 3 16 -3 (semi-insulating sample) up to 1 x 10 cm were studied at room temperature, T = 300 K. 5 x 2 x 2 mm 3 . The electron concentration and mobility were measured by resistivity and Hall measurements.